VTT has developed printed resistive write-once-read-many (WORM) memories for smart system applications that require low cost, allow low bit count and demand low writing voltage. In these applications, writing of data to the memory is typically powered by a flexible voltage source such as a printed battery. VTT has demonstrated the fabrication of memory banks using high-throughput roll-to-roll (R2R) methods. The memory can be provided as a standalone memory bank or integrated directly in a customer system.
Printed low-voltage-programmable memories
The memory element is a key component in most electronic systems, and the ability to store data is crucial to many printed electronics applications. However, no commercially viable printed memory products are yet on the market. The data storage requirements of printed electronics applications range from sensor data logging to storing user input data. In many smart systems, demand for low programming voltage for the memory arises from the limited voltage supply of flexible power sources such as printed batteries. VTT has developed a unique printed memory that allows low writing voltage without additional voltage-raising electronics as well as low cost per bit through the use of high-throughput printing methods for fabrication.
VTT memory development for customer needs and scale-up
VTT can offer co-development for the integration of the printed memory into customer applications. The capability for tailoring the memory elements in-house to customer specifications ranges all the way from lab-scale development to pilot-scale tests with R2Rprocessing machines. The technology behind VTT's WORM memory is secured by a solid patent portfolio including patents for the RES and the memories, which can be licensed.